 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXTA 3N120 IXTP 3N120 VDSS 1200 V ID25 3A RDS(on) 4.5 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C Maximum Ratings 1200 1200 20 30 3 12 3 20 700 V V V V A A A mJ mJ V/ns W C C C C Features International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Advantages Easy to mount Space savings High power density G = Gate S = Source D = Drain TAB = Drain G S D (TAB) G DS TO-220 (IXTP) D (TAB) TO-263 (IXTA) IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 5 200 -55 to +150 150 -55 to +150 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 1.13/10 Nm/lb.in. 4 2 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.0 5.0 100 TJ = 25C TJ = 125C 25 1 4.5 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 (c) 2004 IXYS All rights reserved DS98844E(02/04) IXTA 3N120 IXTP 3N120 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.5 2.6 1100 1350 VGS = 0 V, VDS = 25 V, f = 1 MHz 110 135 40 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 (External), 15 32 18 42 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 8 21 0.62 (TO-220) 0.25 60 S pF pF pF ns ns ns ns nC nC nC K/W K/W Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side TO-220 (IXTP) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 * ID25, Note 1 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 12 1.5 700 A A V ns TO-263 (IXTA) Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = IS, -di/dt = 100 A/s, VR = 100 V Notes: 1. Pulse test, t 300 s, duty cycle d 2 % 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTA 3N120 IXTP 3N120 Fig. 1. Output Characteristics @ 25 Deg. C 3 2.5 VG S = 10V 7V 6V 7 6 7V 5 Fig. 2. Extended Output Characteristics @ 25 deg. C VG S = 10V I D - Amperes I D - Amperes 2 1 .5 1 0.5 0 0 2 4 4 3 2 1 0 6V 5V 5V V DS - Volts 6 8 1 0 1 2 0 5 1 0 1 5 20 25 30 V DS - Volts Fig. 3. Output Characteristics @ 125 Deg. C 3 2.5 VG S = 10V 7V 6V Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature 2.8 2.5 VG S = 10V R D S (on) - Normalized 2.2 1 .9 1 .6 1 .3 1 0.7 0.4 I D = 3A I D = 1.5A I D - Amperes 2 1 .5 5V 1 0.5 0 0 5 1 0 1 5 20 25 -50 -25 0 25 50 75 1 00 1 25 1 50 V DS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID25 Value vs. ID 2.8 2.5 VG S = 10V T J = 125 C 3.5 3 Fig. 6. Drain Current vs. Case Temperature R D S (on) - Normalized I D - Amperes 2.2 1 .9 1 .6 1 .3 1 0.7 0 1 2 3 2.5 2 1 .5 1 0.5 0 T J = 25 C 4 5 6 7 -50 -25 0 25 50 75 1 00 1 25 1 50 I D - Amperes TC - Degrees Centigrade (c) 2004 IXYS All rights reserved IXTA 3N120 IXTP 3N120 Fig. 7. Input Admittance 6 5 8 7 6 T J = -40 C 25 C 125 C Fig. 8. Transconductance 4 3 2 1 0 3.5 4 4.5 5 5.5 6 6.5 T J = 120 C 25 C -40 C g f s - Siemens I D - Amperes 5 4 3 2 1 0 0 1 .5 3 4.5 6 7.5 9 V GS - Volts I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 9 8 7 8 1 0 Fig. 10. Gate Charge VD S = 600V I D = 1.5A I G = 10mA I S - Amperes VG S - Volts T J = 25 C 6 5 4 3 2 1 0 0.4 0.5 0.6 0.7 0.8 0.9 T J = 125 C 6 4 2 0 0 8 1 6 24 32 40 48 V SD - Volts Q G - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M Hz 0.7 0.6 C iss 1 000 Fig. 12. Maximum Transient Thermal Resistance Capacitance - pF R (th) J C - (C/W) 25 30 35 40 0.5 0.4 0.3 0.2 0.1 0 C oss 1 00 C rss 1 0 0 5 1 0 1 5 V DS - Volts 20 1 Pulse Width - milliseconds 1 0 1 00 1 000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
Price & Availability of IXTP3N120
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |